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| Agilent HSCH-9101/9201/9251 GaAs Beam Lead Schottky Barrier Diodes Data Sheet Features * Gold tri-metal system for improved reliability * Low capacitance * Low series resistance * High cutoff frequency Description The HSCH-9101 single, the HSCH-9201 series pair, and the HSCH-9251 anti-parallel pair are advanced gallium arsenide Schottky barrier diodes. These devices are fabricated utilizing molecular beam epitaxy (MBE) manufacturing techniques and feature rugged construction and consistent electrical performance. A polyimide coating provides scratch protection and resistance to contamination. HSCH-9201 * Polyimide passivation * Multiple configurations 115 (4.5) 105 (4.1) 280 (11.0) 200 (7.8) 183 (7.2) 178 (7.0) 346 (13.6) 266 (10.5) 712 (28.0) 702 (27.6) 9 (0.4) 7 (0.3) 60 (2.4) 50 (2.0) L = 0.1 nH HSCH-9101 280 (11.0) 200 (7.8) HSCH-9251 Junction Side Up 125 (4.9) 115 (4.5) 29050 (11.0) 200 (7.8) 125 (4.9) 115 (4.5) 183 (7.2) 178 (7.0) 270 (10.6) 190 (7.5) 636 (25.0) 626 (24.6) 9 (0.4) 7 (0.3) 183 (7.2) 178 (7.0) 28050 (10.6) 190 (7.5) 712 (28.0) 702 (27.6) 9 (0.4) 7 (0.3) 60 (2.4) 50 (2.0) L = 0.1 nH 60 (2.4) 50 (2.0) L = 0.1 nH DIMENSIONS IN m (1/1000 inch) Applications This line of Schottky diodes is optimized for use in mixer applications at millimeter wave frequencies. Some suggested mixer types are single ended and single balanced for the single and series pair. The anti-parallel pair is ideal for harmonic mixers. Assembly Techniques Diodes are ESD sensitive. ESD preventive measures must be em ployed in all aspects of storage, handling, and assembly. Diode ESD precautions, handling considerations, and bonding methods are critical factors in successful diode performance and reliability. Agilent application note #55, "Beam Lead Diode Bonding and Handling Procedures" provides basic information on these subjects. Maximum Ratings Power Dissipation at TLEAD = 25 C........................... 75 mW per junction Measured in an infinite heat sink derated linearly to zero at maximum rated temperature Operating Temperature .................................................... -65 C to +150 C Storage Temperature ........................................................ -65 C to +150 C Mounting Temperature ........................................... 235 C for 10 seconds Minimum Lead Strength ................................................................. 6 grams Electrical Specifications at TA = 25C Symbol Parameters and Test Conditions Junction Capacitance VR = 0 V, f = 1 MHz Junction Capacitance Variation VR = 0 V, f = 1 MHz Series Resistance Forward Voltage IF = 1 mA Forward Voltage IF = 10 mA Forward Voltage Variation IF = 1 mA and 10 mA Reverse Breakdown Voltage VR = VBR measure IR 10 A (per junction) Units pF pF W mV mV mV V HSCH-9101 Min. Typ. Max. 0.040 0.050 Part Number HSCH-9201 Min. Typ. Max. 0.040 0.005 0.050 0.010 6 700 800 800 850 15 HSCH-9251 Min. Typ. Max. 0.040 Cj [1] C j [1] RS [2] VF1 VF10 VF VBR 6 700 800 800 850 6 700 800 800 850 15 4.5 4.5 Notes: 1. Junction capacitance is determined by measuring total device capacitance and subtracting the calculated parasitic capacitance (0.035 pF). 2. Series resistance is determined by measuring the dynamic resistance and subtracting the calculated junction resistance of 6. 2 Typical Parameters 100 +125C +25C -55C IF IMPEDANCE () 300 FORWARD CURRENT (mA) 200 Z IF 10 100 1 NOISE FIGURE (dB) 8 0.1 7 NF 0.01 6 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 12 14 FORWARD VOLTAGE (V) LOCAL OSCILLATOR POWER (dBm) Figure 1. Typical Forward Characteristics for HSCH-9101, HSCH-9201, and HSCH-9251. Figure 2. Typical Noise Figure and I.F. Impedance vs. Local Oscillator Power, for HSCH-9101 and HSCH-9201. SPICE Parameters Parameter BV CJ0 EG IBV IS N RS PB PT M V Units V pF eV A A HSCH-9XXX 5 0.04 1.43 10E-5 1.6 x 10E-13 1.20 5 0.7 2 0.5 This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local Agilent Technologies sales representative. 3 www.semiconductor.agilent.com Data subject to change. Copyright (c) 2001 Agilent Technologies, Inc. Obsoletes 5965-8851E October 18, 2001 5988-1897EN |
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